مشخصات پژوهش

صفحه نخست /A Class-AB Bulk-Driven ...
عنوان A Class-AB Bulk-Driven Amplifier with Enhanced Transconductance Using Quasi-Floating Gate Method
نوع پژوهش مقاله چاپ‌شده در مجلات علمی
کلیدواژه‌ها Transconductance, quasi-floating gate, class-AB, bulk-driven.
چکیده This paper presents a supper class-AB adaptive biasing bulk-driven amplifier for ultra-low-power applications. In the proposed structure, two bulk-driven flipped voltage follower (FVF) cells are reconfigured as nonlinear tail currents using quasi-floating gate method to enhance transconductance and slew rate. In addition, two idle current controllers are employed as common source amplifiers to provide a supper class-AB structure without increasing total current consumption. The proposed structure is simulated in 0.18-μm CMOS technology at 0.5V supply with 35nW power budget. The results show a 57.9dB DC gain, 8.8kHz gain bandwidth and 38.2V/ms slew rate for the proposed amplifier.
پژوهشگران امید هاشمی پور (نفر دوم)، میثم اکبری (نفر اول)