عنوان
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A Class-AB Bulk-Driven Amplifier with Enhanced Transconductance Using Quasi-Floating Gate Method
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نوع پژوهش
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مقاله چاپشده در مجلات علمی
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کلیدواژهها
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Transconductance, quasi-floating gate, class-AB, bulk-driven.
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چکیده
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This paper presents a supper class-AB adaptive biasing bulk-driven amplifier for ultra-low-power applications. In the proposed structure, two bulk-driven flipped voltage follower (FVF) cells are reconfigured as nonlinear tail currents using quasi-floating gate method to enhance transconductance and slew rate. In addition, two idle current controllers are employed as common source amplifiers to provide a supper class-AB structure without increasing total current consumption. The proposed structure is simulated in 0.18-μm CMOS technology at 0.5V supply with 35nW power budget. The results show a 57.9dB DC gain, 8.8kHz gain bandwidth and 38.2V/ms slew rate for the proposed amplifier.
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پژوهشگران
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میثم اکبری (نفر اول)، امید هاشمی پور (نفر دوم)
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