2024 : 11 : 21
Meysam Akbari

Meysam Akbari

Academic rank: Assistant Professor
ORCID: 0000-0002-4251-1138
Education: PhD.
ScopusId: 987163213
HIndex:
Faculty: Faculty of Engineering
Address: Room #202, Building #1, Department of Engineering, University of Kurdistan, Pasdaran, Sanandaj, Kurdistan, Iran
Phone:

Research

Title
A 0.3-V Conductance-Based Silicon Neuron in 0.18 μm CMOS Process
Type
JournalPaper
Keywords
Neuron, low-energy, spike, first-order, membrane, frequency adaption
Year
2021
Journal IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
DOI
Researchers Meysam Akbari ، Safwan Mawlood Hussein ، Ting-I Chou ، Kea-Tiong Tang

Abstract

This brief presents a conductance-based neuron that is capable of operating under ultra-low-voltage supplies. The proposed neuron employs a variable-gain low-pass filter to linearly integrate the input spikes onto the membrane capacitance. A positive feedback topology is used to generate output spikes and implement a frequency adaption mechanism. A differential amplifier is as well employed as a comparator to reset the membrane potential and set a threshold voltage to control the spike generator circuit. The mathematical analyses result in a first-order linear equation for membrane current of the neuron. The designed neuron was fabricated in TSMC 0.18 μm CMOS technology with an area of 993 μm2 that consumes 135 fJ/spike under a 0.3-V supply voltage. The experimental results show frequency adaption mechanism and intrinsic chattering, while regular and fast-firing behaviors are achieved by adjusting control parameters.