Graphene monolayer's rapid rise prompted extensive research into other two-dimensional (2D) materials. This study uses the tight-binding model (TBM) and Green's function to examine the electronic, magnetic, and thermodynamic behavior of the C3N monolayer, a material with a graphene-like honeycomb structure. We explore the effects of strain, electron doping, and temperature to study these properties further. Calculations using the TBM reveal that the C3N monolayer is a semiconductor with a band gap of 0.36 eV. Our calculations show that electronic heat capacity and Pauli magnetic susceptibility increase with increasing tensile biaxial strain. In contrast, compressive biaxial strain reduces them. Our electrical conductivity calculations reveal intriguing properties for the C3N monolayer. Our findings suggest that the C3N monolayer is a promising, stable 2D material with potential applications in sensors, electronics, and spintronics.
