In this paper modulation depth and power consumption are optimized in silicon based ring resonator modulator. For having minimum bit error rate and easy detection of information at receiver, modulation depth should be maximized. For decreasing bit error rate, the modulation depth should be increased. Here a specific structure of modulator is considered. For maximizing modulation depth a method is presented. In this method, COMSOL software and analytical equation are used and an optimum voltage is obtained. Also the effects of doping concentration on power consumption are studied. It is shown with reduction of doping concentration, optimum voltage decrease and cause reduction in power consumption. Another result of reducing doping concentration is reducing loss in the ring waveguide decrease.
