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Bandar Astinchap

Bandar Astinchap

Academic rank: Associate Professor
ORCID:
Education: PhD.
ScopusId: 24342779500
HIndex:
Faculty: Faculty of Science
Address:
Phone:

Research

Title
Thermoelectric Properties of Monolayer MoS2 in the Presence of Magnetic Field and Electron/Hole Doping by Using the Holstein Model
Type
JournalPaper
Keywords
Monolayer MoS2, Holstein model, Electron-phonon coupling, Thermal conductivity, Seebeck coefficient
Year
2020
Journal ECS Journal of Solid State Science and Technology
DOI
Researchers Mona Abdi ، Bandar Astinchap

Abstract

In this research, we investigate the influence of the external magnetic field, chemical potential, and electron-phonon coupling strength on thermal conductivity and Seebeck coefficient of monolayer MoS2 by using the Holstein model. The Green's function is used to calculate the variation of thermoelectric properties of the monolayer MoS2. The numerical results reveal that the thermal conductivity and Seebeck coefficient are strongly dependent on electron-phonon coupling strength, electron and hole doping, and applying an external magnetic field. The effects of an external magnetic field, electron doping, and electron-phonon coupling on thermal conductivity are similar, and all three reduce it, but hole doping increases it. We show that electron doping has a great effect on the Seebeck coefficient of the monolayer MoS2, so that changes it from the p-type to n-type d semiconductor. The chemical potential effect in the high-temperature area on the Seebeck coefficient is negligible. We got that thermoelectric power decreases with an increase in electron-phonon coupling strength. As new results, we reveal thatthe semiconductor type of monolayer MoS2 is sensitive to the electron-phonon coupling and electron doping.